Conventional electronic circuits are rapidly approaching their fundamental limits in speed and data-transmission bandwidth. Optical nanotechnology offers a route past these limits — enabling ultrafast operation, high-capacity data transfer, and cost-effective low-power devices. We combine electronics and photonics at the nanoscale to realize integrated platforms for optical and electrical signal processing.
Top-down fabricated III–V semiconductor nanowires with a vertical pn-junction, converted to nano-LEDs and coupled to plasmonic waveguides for sub-wavelength light coupling and nanofocusing.
Nano Lett. 13, 772–776 (2013)
One-dimensional photonic-crystal cavity fabricated from an InGaAsP wafer with multi-quantum wells, electrically pumped for low-threshold lasing operation at room temperature.
Nat. Commun. 4, 2822 (2013)
SEM image of a vertical tip-modulated device array in a 10×10 grid layout, featuring nanoscale pn-junctions for biological/chemical sensing and photodetection.
Nano Lett. 16, 4713–4719 (2016)
Fabricated devices — gallery
III–V microdisk with InP post after selective wet etching. Inset shows the InGaAsP microdisk array.
InGaAsP microdisk transferred onto a Si post — an on-chip platform for hybrid III-V on Si integration.
All-graphene contact electrically pumped microdisk LED. Voltage–current characteristic with top/bottom graphene contacts on an AlGaInP/SiO₂ stack.
TLM device for measuring contact resistance between PMMA/MLG sheet and Au electrodes.
TLM device on AlGaInP substrate — channel-length-dependent contact resistance characterization.
III–V nanowire (L_NW ≈ 9 μm) suspended over a GaAs substrate after selective wet etching.
Integrated device — nanowire with top/bottom graphene contacts coupled to a Si₃N₄ photonic waveguide via a taper. EL image (×15) shows light propagating along the waveguide.
Single nanowire device with Top-Gr/PMMA (p-type) and Bottom-Gr/PMMA (n-type) contacts.